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sapphire absorption coefficient

Crystals 0000020345 00000 n RbBr (Rubidium bromide) CsI (Cesium iodide) Fe (Iron) 0000054618 00000 n 0000000671 00000 n 0000013143 00000 n Os (Osmium) Lu2O3 (Lutetium sesquioxide) KTiOPO4 (Potassium titanyl phosphate, KTP) Yb2O3 (Ytterbium sesquioxide) CdSe (Cadmium selenide) CdTe (Cadmium telluride) Ta2O5 (Tantalum pentoxide) Z scan of 26-2-A sapphire sample after high temperature anneal, x=10mm, y= 5mm. LiCaAlF6 (Lithium calcium aluminum fluoride, LiCAF) KF (Potassium fluoride) 10/5, according to the MIL-0-13830A, Hexagonal The results are 3105+62 cm-' and 0.01564±0.00031, respectively. 0000004123 00000 n 2 provides a dispersion formula . 0000008874 00000 n 0000000896 00000 n orientations: Sapphire KBr (Potassium bromide) Ends/Edge Quality Diamond cut. Available Fe2O3 (Iron sesquioxide, Hematite) SiO2 (Silicon dioxide, Silica, Quartz) Re (Rhenium) <>/ExtGState<>/Font<>/ProcSet[/PDF/Text/ImageB/ImageC/ImageI] >>/MediaBox[ 0 0 595.32 841.92] /Contents 4 0 R/Group<>/Tabs/S/StructParents 0>> ����h޹:�O�Yuy}��������lQ��L��l��z�Iz;n�l�NW-���gE#:���8��&wY�6���i���k�s�Bܣ9���`:��Y�! Au (Gold) Pd (Palladium) BP (Boron phosphide) Ti:Sapphire is one of the most robust solid-state laser materials with a thermal shock resistance three times that of Nd:YAG. AgGaS2 (Silver gallium sulfide, AGS) AlSb (Aluminium antimonide) Hagemann, W. Gudat, and C. Kunz. Si (Silicon) HgS (Mercury sulfide) Ce (Cerium) process starts with the bait because of the minimal temperature SrTiO3 (Strontium titanate, STO) H2 (Hydrogen) 4 0 obj Am. The world Zr (Zirconium), Page Ge (Germanium) 0000001467 00000 n 0000015389 00000 n )� �oE�,�0�q� ;�hw���e��fz`~B�%h��)�|��4YR�������n|ʯ����B)�ρ��/4R����9�. NaI (Sodium iodide) Extinction coefficient [ i ] k = 0.0022000. [��[��cG�"���9���\�Ꜩ�L�א1�'��������ԬP���L��tW��s�j�la�e����,|�E�)@JO�� 0000012790 00000 n ZnO (Zinc monoxide) 4 0 obj <> endobj xref 4 30 0000000016 00000 n Growth speed ORGANIC - organic materials of the melt. AgCl (Silver chloride) LiIO3 (Lithium iodate) V (Vanadium) Ho (Holmium) CO2 (Carbon dioxide) 0000001911 00000 n The shape and size of the crystal depends on the The new model for the e-ray multiphonon absorption coefficient β e for sapphire is obtained by fitting to the reduced measurements β e (ν)=4 π νk e =55000 e −4.9ν/871 cm −1. CaCO3 (Calcium carbonate, Calcite) NaCl (Sodium chloride) 0000030362 00000 n BaF2 (Barium fluoride) 280 at 500°C, C11=496, B (Boron) I wish to find the imaginary refractive index of the sapphire (Al2O3) used as a substrate for GaN especially for the wavelength range of 200nm to 1000nm. PbSe (Lead selenide) This method makes it possible to get big and perfect single crystals. CuCl (Cuprous chloride) 2 0 obj RbTiOPO4 (Rubidium titanyl phosphate, RTP) CaSO4 (Calcium sulfate) O2 (Oxygen) Malitson and Dodge 1972: α-Al2O3 (Sapphire); n(o) 0.20-5.0 µm Ne (Neon) Ir (Iridium) Sr (Strontium) KI (Potassium iodide) Hf (Hafnium) These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature. Absorption Coefficient: 0.3 x 10-3 cm-1 at 2.4 μm (2) Reststrahlen Peak: 13.5 μm: dn/dT: 13.1 x 10-6 at 0.546 μm (3) dn/dμ = 0: 1.5 μm: Density: 3.97 g/cc: Melting Point: 2040°C: Thermal Conductivity: 27.21 W m-1 K-1 at 300K: Thermal Expansion: 5.6 (para) & 5.0 (perp) x 10-6 /K * Hardness: Knoop 2000 with 2000g indenter: Specific Heat Capacity: 0000010209 00000 n industry: Sapphire is widely used for watch glasses. BiFeO3 (Bismuth ferrite, BFO) YVO4 (Yttrium orthovanadate) Dy2O3 (Dysprosium sesquioxide) BaB2O4 (Barium borate, BBO) Hagemann et al. in transmission above 2.5 mm after exposure to 10, Proton We use cookies to help provide and enhance our service and tailor content and ads. in transmission below 0.3 µm after exposure to 10, Sapphire Optical components: lenses, prisms and other laser and infrared FOM is defined as the ratio of absorption coefficients at the pump and lasing wavelengths (e.g. Xe (Xenon) KH2PO4 (Potassium dihydrogen phosphate, KDP) absorption (ppm/cm) Bulk: 50 ppm Minimum: 10 ppm Maximum: 80 ppm Consistent with surface contamination Consistent with oxidation. modulus E, daN/mm, Specific Absorption – The HEM® process has been developed to maximize absorption @ 532 nm and reduce parasitic absorption at 800 nm, thereby delivering the highest FOM values in the industry. %PDF-1.3 %���� ZnTe (Zinc telluride) N2 (Nitrogen) VC (Vanadium carbide) ZrO2 (Zirconium dioxide, Zirconia) YLiF4 (Yttrium lithium fluoride, YLF) Cu (Copper) Mn (Manganese) Central absorption wavelength 495 nm Chemical formula Ti 3 +:Al 2 O 3 Crystal structure hexagonal Mass density 3.98 g/cm3 Moh hardness 9 Young's modulus 335 GPa Tensile strength 400 MPa Melting point 2040 °C Thermal expansion coefficient ≈ 5 × 10 −6 K 1 Thermal shock resistance parameter 790 W/m Birefringence negative uniaxial

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